? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 1 of 7 sensitron semiconductor technical data data sheet 4098, rev. d.1 three-phase igbt bridge, with gate driver and optical isolation description: a 600 volt, 80 amp, three phase igbt bridge electrical characteristics per igbt device (tj=25 0 c unless otherwise specified) p p a a r r a a m m e e t t e e r r s s y y m m b b o o l l m m i i n n t t y y p p m m a a x x u u n n i i t t igbt specifications collector to emitter breakdown voltage i c = 250 a, v ge = 0v bv ces 600 - - v continuous collector current t c = 25 o c t c = 90 o c i c - - 80 70 a pulsed collector current, 1ms i cm - - 170 a gate to emitter voltage v ge - - +/-20 v gate-emitter leakage current , v ge = +/-20v i ges - - +/- 100 na zero gate voltage collector current v ce = 600 v, v ge =0v t i =25 o c v ce = 480 v, v ge =0v t i =125 o c i ces - - 1 10 ma ma collector to emitter saturation voltage, t c = 25 o c i c = 60a, v ge = 15v, v ce(sat) - 1.7 2.0 v maximum thermal resistance r jc - - 0.45 o c/w brake igbt specifications continuous collector current t c = 25 o c t c = 90 o c i c - - 40 25 a pulsed collector current, 0.5ms i cm - - 120 a brake resistor specifications maximum continuous power dissipation pd 2 watt impulse energy 80 joules maximum operating junction temperature t jmax -40 - 150 o c maximum storage junction temperature t jmax -55 - 150 o c . spm6g080-060d
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 2 of 7 sensitron technical data data sheet 4098, rev. d.1 over-temperature shutdown over-temperature shutdown tsd 100 110 120 o c over-temperature output tso 10 10mv/ o c over-temperature shutdown hysteresis 20 o c ultrafast diodes rating and characteristics diode peak inverse voltage piv 600 - - v continuous forward current, t c = 90 o c i f - - 60 a forward surge current, t p = 10 msec i fsm - - 300 a diode forward voltage, i f = 60a v f - 1.4 1.7 v diode reverse recovery time (i f =60a, v rr =300v , di/dt=200 a/ s) t rr - 90 160 nsec maximum thermal resistance r jc - - 0.8 o c/w gate driver supply voltage vcc 10 15 20 v input on current hin, lin 2 5.0 ma opto-isolator logic high input threshold i th - 1.6 - ma input reverse breakdown voltage bv in 5.0 - - v input forward voltage @ i in = 5ma v f - 1.5 1.7 v under voltage lockout vccuv 11.5 - 12.5 v itrip reference voltage (1) itrip-ref 2.9 3.0 3.1 v input-to-output turn on delay output turn on rise time input-to-output turn off delay output turn off fall time @ vcc=300v, ic=50a, t c = 25 t ond t r t offd t f - - - - 800 100 1000 100 nsec input-output isolation voltage - 1000 - - v (1) itrip cycle-by cycle current limit is internally set to 70a peak. the set point can be lowered by connecting a resistor between itrip-ref and gnd. the set point can be increased by connecting a resistor between itrip-ref and +5v ref spm6g080-060d
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 3 of 7 sensitron technical data data sheet 4098, rev. d.1 pin description pin number function pin number function 1 isolated input for low-side igbt of phase a 17 +15v rtn (signal ground) 2 return for input at 1 18 fault output (3) 3 isolated input for high-side igbt of phase a 19 fault clear input (3) 4 return for input at 3 20 +5v output 5 isolated input for low -side igbt of phase b 21 over-current trip set point (3) 6 return for input at 5 22 dc bus current output with total gain of 0.0365 v/a 7 isolated input for high-side igbt of phase b 23 case temperature output with a gain of 0.010 v/ o c 8 return for input at 7 24 brake igbt gate input 9 isolated input for low-side igbt of phase c 25 brake igbt emitter input. this input is internally connected to signal ground 10 return for input at 9 26 to 30 dc bus return 11 isolated input for high-side igbt of phase c 31 , 32 brake resistor terminal. brake resistor shall be connected between these terminals and +vdc 12 return for input at 11 33 to 37 dc bus ?+vdc? input 13 nc 38 to 42 phase c output 14 nc 43 to 47 phase b output 15 sd (3) 48 to 52 phase a output 16 +15v input case isolated spm6g080-060d
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 4 of 7 sensitron technical data data sheet 4098, rev. d.1 package drawing top view: spm6g080-060d
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 5 of 7 sensitron technical data data sheet 4098, rev. d.1 package drawing side view: spm6g080-060d
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 6 of 7 sensitron technical data data sheet 4098, rev. d.1 application notes: a- shutdown feature: 1- sd is a dual function input/output, active low inpu t. it is internally pulled high. as a low input shuts down all igbts regardless of the hin and lin signals. 2- sd is also internally activated by the ove r-temperature shutdown, over-current limit, under- voltage shutdown, and desat uration protection. 3- over-temperature shutdown, and over-curr ent limit are not latching features. 4- under-voltage shutdown is automatically reset after 300 msec once the vcc rises above the threshold limit. 5- desaturation shutdown is a latching feature and internally reset after 300 msec. 6- when any of the internal protection featur es is activated, sd is pulled down. 7- sd can be used to shutdown all igbts except the brake igbt by an external command. an open collector switch shall be used to pull down sd externally. 8- also, sd can be used as a fault condition out put. low output at sd indicates a fault situation. b- fault output feature: 1- pin 18 flt is a dual function pin. it is internally pu lled high. if pulled down, it will freeze the status of all the six igbts regardless of the hin and lin signals 2- pin 18 as an output reports desat uration protection activation. when desaturation protection is activated a low output for about 9 sec is reported. 3- if any other protection feature is activa ted, it will not be reported by pin 18. c- fault clear output: 1- pin 19 is a fault clear input. it can be used to rese t a latching fault condition, due to desaturation protection. 2- pin 19 is internally pulled down. a latching f ault due to desaturation can be cleared by pulling high this input. 3- an internal fault clear is activated after 300 msec delay. if desired to clear the fault earlier, this input can be used. spm6g080-060d
? 221 west industry court deer park, ny 11729 (631) 586 7600 fax (631) 242 9798 ? ? world wide web site - http://www.sensitron.com ? e-mail address - sales@sensitron.com ? page 7 of 7 sensitron technical data data sheet 4098, rev. d.1 cleaning process: suggested precaution following cleaning procedure: if the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the parts be baked immediately after cleaning. this is to remove any moisture that may have permeated into the device during the cleaning process. for aqueous based solutions, the recommended process is to bake for at least 2 hours at 125 o c. do not use solvents based cleaners. recommended soldering procedure: signal pins 1-24: 210c for 10 seconds max power pins 25 to 52: 260c for 10 seconds max. pre-warm module to 125c to aid in power pins soldering. disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns. spm6g080-060d
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